Spin Transport and Precession in Graphene measured by Nonlocal and Three-Terminal Methods

Abstract

We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and threeterminal measurement geometries. Identical spin lifetimes, spin diffusion lengths and spin polarizations are observed in graphene devices for both techniques over a wide range of temperatures. The magnitude of the spin signals is well explained by spin transport models. These observations rules out any signal enhancements or additional scattering mechanisms at the interfaces for both geometries. This validates the applicability of both the measurement methods for graphene based spintronics devices and their reliable extractions of spin parameters.

arXiv comment5 pages, 4 figures

References in corpus (15)

• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Electronic spin transport and spin precession in single graphene layers at room temperature
• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Spin Relaxation in Single Layer and Bilayer Graphene
• Electron spin relaxation in graphene: the role of the substrate
• Enhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor
• Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
• Contact induced spin relaxation in Hanle spin precession measurements
• Crossover from spin accumulation into interface states to spin injection in the germanium conduction band
• Efficient Spin Injection into Silicon and the Role of the Schottky Barrier
• All-electrical spin injection and detection in the Co2FeSi/GaAs hybrid system in the local and non-local configuration
• How reliable are Hanle measurements in metals in a three-terminal geometry?
• Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC
• Spin-injection spectra of CoFe/GaAs contacts: dependence on Fe concentration, interface and annealing conditions
• Thermal Creation of Electron Spin Polarization in n-Type Silicon

Cited by in corpus (11)

• Colloquium: Spintronics in graphene and other two-dimensional materials
• Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators
• Tunnel Magnetoresistance with Atomically Thin Two-Dimensional Hexagonal Boron Nitride Barriers
• Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions
• Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
• Large-scale BN tunnel barriers for graphene spintronics
• One-dimensional ferromagnetic edge contacts to two-dimensional graphene/h-BN heterostructures
• Spin diffusion in ultracold spin-orbit coupled ${}^{40}$K gas
• Magnetite nano-islands on silicon-carbide with graphene
• The shape of the Hanle curve in spin-transport structures in the presence of the ac drive
• Manifestation of two-channel nonlocal spin transport in the shapes of the Hanle curves