QCAD Simulation and Optimization of Semiconductor Quantum Dots

Abstract

We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed for quantum bits (qubits). This finite-element simulator has three differentiating features: (i) its core contains nonlinear Poisson, effective mass Schrodinger, and Configuration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; and (iii) it interfaces directly with the full-featured optimization engine Dakota. In this work, we describe the capabilities and implementation of the QCAD simulation tool, and show how it can be used to both analyze existing experimental QD devices through capacitance calculations, and aid in the design of few-electron multi-QDs. In particular, we observe that computed capacitances are in rough agreement with experiment, and that quantum confinement increases capacitance when the number of electrons is fixed in a quantum dot. Coupling of QCAD with the optimizer Dakota allows for rapid identification and improvement of device layouts that are likely to exhibit few-electron quantum dot characteristics.

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Cited by in corpus (9)

• Six-electron semiconductor double quantum dot qubits
• Efficient self-consistent quantum transport simulator for quantum devices
• Quantum dots with split enhancement gate tunnel barrier control
• Effect of a skin-deep surface zone on formation of two-dimensional electron gas at a semiconductor surface
• Tuning spatial entanglement in interacting few-electron quantum dots
• Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
• Simulation of Charge Stability Diagrams for Automated Tuning Solutions (SimCATS)
• Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants
• A Computational Workflow for Designing Silicon Donor Qubits