Two dimensional semiconductors with possible high room temperature mobility
arXiv:1403.3872 · doi:10.1007/s12274-014-0532-x
Abstract
We calculated the longitudinal acoustic phonon limited electron mobility of 14 two dimensional semiconductors with composition of MX, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by deformation potential approximation. We found that out of the 14 compounds, MoTe, HfSe and HfTe, are promising regarding to the possible high mobility and finite band gap. The phonon limited mobility can be above 2500 cmVs at room temperature.
References in corpus (3)
Cited by in corpus (33)
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors
- Mobility anisotropy of two-dimensional semiconductors
- Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability
- Three-particle Complexes in Two-Dimensional Semiconductors
- Ab-initio NEGF Perspective of Ultra-Scaled CMOS: From 2D-material Fundamentals to Novel Dynamically-Doped Transistors
- Polarons in two-dimensional atomic crystals
- Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials
- Defect-induced large spin-orbit splitting in the monolayer of PtSe
- Spatially Resolved Electronic Properties of Single-Layer WS on Transition Metal Oxides
- Quantum Transport in Two-Dimensional WS with High-Efficiency Carrier Injection Through Indium Alloy Contacts
- Accurate prediction of Hall mobilities in two-dimensional materials through gauge-covariant quadrupolar contributions
- Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors
- Electronic bandstructure of in-plane ferroelectric van der Waals
- Two-dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors
- Electronic and optical excitations of two-dimensional ZrS and HfS and their heterostructure
- Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide
- Erbium-doped WS with Down- and Up-Conversion Photoluminescence Integrated on Silicon for Heterojunction Infrared Photodetection
- Isotropic conduction and negative photoconduction in ultrathin PtSe films
- High carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001)
- Two dimensional transition metal dichalcogenide based bilayer heterojunctions for efficient solar cells and photocatalytic applications
- High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization
- Spin splitting with persistent spin textures induced by the line defect in 1T-phase of monolayer transition metal dichalcogenides
- Modeling of Anisotropic Two-Dimensional Materials Monolayer HfS2 and Phosphorene MOSFETs
- The Electrical and Spin Properties of Monolayer and Bilayer Janus HfSSe under Vertical Electrical Field
- Phonons in MoSe2/WSe2 van der Waals heterobilayer
- Potassium-intercalated bulk HfS and HfSe: Phase stability, structure, and electronic structure
- Lattice Transformation from 2-D to Quasi 1-D and Phonon Properties of Exfoliated ZrS2 and ZrSe2
- Carrier Mobility and High-Field Velocity in 2D Transition Metal Dichalcogenides: Degeneracy and Screening
- SrPd, a candidate material with extremely large magnetoresistance
- Excitonic luminescence of iodine-intercalated HfS
- Pressure-induced optical anisotropy of HfS
- Erbium-implanted WS2 flakes with room-temperature photon emission at telecom wavelengths