Soft x-ray photoemission study of new BiS${}_2$-layered superconductor LaO${}_{1-x}$F${}_x$BiS${}_2$

Abstract

We use core level and valence band soft x-ray photoemission spectroscopy (SXPES) to investigate electronic structure of new BiS${}_2$ layered superconductor LaO${}_{1-x}$F${}_x$BiS${}_2$. Core level spectra of doped samples show a new spectral feature at the lower binding energy side of the Bi 4$f$ main peak, which may be explained by core-hole screening with metallic states near the Fermi level ($E_{\mathrm{F}}$). Experimental electronic structure and its $x$ dependence (higher binding energy shift of the valence band as well as appearance of new states near $E_{\mathrm{F}}$ having dominant Bi 6$p$ character) were found to be consistent with the predictions of band structure calculations in general. Noticeable deviation of the spectral shape of the states near $E_{\mathrm{F}}$ from that of calculations might give insight into the interesting physical properties. These results provide first experimental electronic structure of the new BiS${}_2$ layered superconductors.

14 pages, 4 figures

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Cited by in corpus (8)

• Material Development and Physical Properties of BiS2-Based Layered Compounds
• Site Selectivity on Chalcogen Atoms in Superconducting La(O,F)BiSSe
• Proximity to Fermi-surface topological change in superconducting LaO0.54F0.46BiS2
• First single crystal growth and structural analysis of superconducting layered bismuth oxyselenide; La(O,F)BiSe2
• The magnetic and electronic properties of Oxyselenides - influence of transition metal ions and lanthanides
• Enhanced thermoelectricity by controlled local structure in bismuth-chalcogenides
• Bulk superconductivity in Pb-substituted BiS${}_2$-based compounds studied by hard-x-ray spectroscopy
• Normal state electronic properties of LaO${}_{1-x}$F${}_x$BiS${}_2$ superconductors