Single Particle Transport in Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor

Abstract

The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) is proposed and described. The tunneling current is calculated by using a formalism based on the Bardeen's transfer Hamiltonian, and including a semi-classical treatment of scattering and energy broadening effects. The misalignment between the two 2D materials is also studied and found to influence the magnitude of the tunneling current, but have a modest impact on its gate voltage dependence. Our simulation results suggest that the Thin-TFETs can achieve very steep subthreshold swing, whose lower limit is ultimately set by the band tails in the energy gaps of the 2D materials produced by energy broadening. The Thin-TFET is thus very promising as a low voltage, low energy solid state electronic switch.

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Cited by in corpus (14)

• Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment
• Strain induced mobility modulation in single-layer MoS${}_2$
• Switching Mechanism and the Scalability of vertical-TFETs
• First principle investigation of Tunnel FET based on nanoribbons from topological two-dimensional material
• High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions
• Interlayer exciton valley polarization dynamics in large magnetic fields
• Operating Principles of Vertical Transistors Based on Monolayer Two-Dimensional Semiconductor Heterojunctions
• Challenges and constraints of dynamically emerged source and sink in atomtronic circuits: From closed-system to open-system approaches
• Valley-polarised tunnelling currents in bilayer graphene tunnelling transistors
• Transport in vertically stacked hetero-structures from 2D materials
• Simulation of Thin-TFETs Using Transition Metal Dichalcogenides: Effect of Material Parameters, Gate Dielectric on Electrostatic Device Performance
• Electrical-equivalent van der Waals gap for 2D bilayers
• Characteristics of Interlayer Tunneling Field Effect Transistors Computed by a "DFT-Bardeen" Method
• Magnitude of the Current in Two-Dimensional Interlayer Tunneling Devices