A Comprehensive Graphene FET Model for Circuit Design

Abstract

During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time, analytical models that predict the electrical characteristics of GFETs have evolved rapidly. These models, however, have a complexity level that can only be handled with the help of a circuit simulator. On the other hand, analog circuit designers require simple models that enable them to carry out fast hand calculations, i.e., to create circuits using small-signal hybrid-π models, calculate figures of merit, estimate gains, pole-zero positions, etc. This paper presents a comprehensive GFET model that is simple enough for being used in hand-calculations during circuit design and at the same time it is accurate enough to capture the electrical characteristics of the devices in the operating regions of interest. Closed analytical expressions are provided for the drain current ID, small-signal transconductance gain gm, output resistance ro, and parasitic Vgs and Cgd. In addition, figures of merit such as intrinsic voltage gain AV, transconductance efficiency gm/ID, and transit frequency fT are presented. The proposed model has been compared to a complete analytical model and also to measured data available in current literature. The results show that the proposed model follows closely to both the complete analytical model and the measured data; therefore, it can be successfully applied in the design of GFET analog circuits.

9 pages,11 figures

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Cited by in corpus (10)

• Large-Signal Model of Graphene Field-Effect Transistors -- Part I: Compact Modeling of GFET Intrinsic Capacitances
• Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
• Short channel effects in graphene-based field effect transistors targeting radio-frequency applications
• Large Scale Integration of Graphene Transistors for Potential Applications in the Back End of the Line
• Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor
• Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?
• Static Non-linearity in Graphene Field Effect Transistors
• Straightforward Bias and Frequency Dependent Small-Signal Model Extraction for Single-Layer Graphene FETs
• Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: theory versus experiment
• Semianalytical quantum model for graphene field-effect transistors