85 citations · 181 across the 8 of their papers we have counts for
8 papers
Rate-capability of the VMM3a Front End in the RD51 Scalable Readout System
D. Pfeiffer, L. Scharenberg, P. Schwäbig +20
The VMM3a is an Application Specific Integrated Circuit (ASIC), specifically developed for the readout of gaseous detectors. Originally developed within the ATLAS New Small Wheel (…
Spin-Torque and Spin-Hall Nano-Oscillators
Tingsu Chen, Randy K. Dumas, Anders Eklund +7
This paper reviews the state of the art in spin-torque and spin Hall effect driven nano-oscillators. After a brief introduction to the underlying physics, the authors discuss diffe…
A Batteryless Sensor ASIC for Implantable Bio-impedance Applications
Saul Rodriguez, Stig Ollmar, Muhammad Waqar +1
The measurement of the biological tissue's electrical impedance is an active research field that has attracted a lot of attention during the last decades. Bio-impedances are closel…
Comprehensive and Macrospin-Based Magnetic Tunnel Junction Spin Torque Oscillator Model - Part II: Verilog-A Model Implementation
Tingsu Chen, Anders Eklund, Ezio Iacocca +4
The rapid development of the magnetic tunnel junction (MTJ) spin torque oscillator (STO) technology demands an analytical model to enable building MTJ STO-based circuits and system…
Comprehensive and Macrospin-Based Magnetic Tunnel Junction Spin Torque Oscillator Model - Part I: Analytical Model of the MTJ STO
Tingsu Chen, Anders Eklund, Ezio Iacocca +4
Magnetic tunnel junction (MTJ) spin torque oscillators (STO) have shown the potential to be used in a wide range of microwave and sensing applications. To evaluate potential uses o…
Static Non-linearity in Graphene Field Effect Transistors
Saul Rodriguez, Anderson Smith, Sam Vaziri +3
The static linearity performance metrics of the GFET transconductor are studied and modeled. Closed expressions are proposed for second and third order harmonic distortion (HD2, HD…
A Comprehensive Graphene FET Model for Circuit Design
Saul Rodriguez, Sam Vaziri, Anderson Smith +4
During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electron…
RF Performance Projections of Graphene FETs vs. Silicon MOSFETs
Saul Rodriguez, Sam Vaziri, Mikael Ostling +3
A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio fre…