activity
20112015
most citedA Comprehensive Graphene FET Model for Circuit Design

85 citations · 162 across the 6 of their papers we have counts for

collaborators

6 papers

cs.ET2015

A Batteryless Sensor ASIC for Implantable Bio-impedance Applications

Saul Rodriguez, Stig Ollmar, Muhammad Waqar +1

The measurement of the biological tissue's electrical impedance is an active research field that has attracted a lot of attention during the last decades. Bio-impedances are closel…

cond-mat.mes-hall2014★ 14 cited

Comprehensive and Macrospin-Based Magnetic Tunnel Junction Spin Torque Oscillator Model - Part II: Verilog-A Model Implementation

Tingsu Chen, Anders Eklund, Ezio Iacocca +4

The rapid development of the magnetic tunnel junction (MTJ) spin torque oscillator (STO) technology demands an analytical model to enable building MTJ STO-based circuits and system…

cond-mat.mes-hall2014★ 18 cited

Comprehensive and Macrospin-Based Magnetic Tunnel Junction Spin Torque Oscillator Model - Part I: Analytical Model of the MTJ STO

Tingsu Chen, Anders Eklund, Ezio Iacocca +4

Magnetic tunnel junction (MTJ) spin torque oscillators (STO) have shown the potential to be used in a wide range of microwave and sensing applications. To evaluate potential uses o…

cond-mat.mes-hall2014★ 16 cited

Static Non-linearity in Graphene Field Effect Transistors

Saul Rodriguez, Anderson Smith, Sam Vaziri +3

The static linearity performance metrics of the GFET transconductor are studied and modeled. Closed expressions are proposed for second and third order harmonic distortion (HD2, HD…

cond-mat.mes-hall2013★ 85 cited

A Comprehensive Graphene FET Model for Circuit Design

Saul Rodriguez, Sam Vaziri, Anderson Smith +4

During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electron…

cond-mat.mes-hall2011★ 29 cited

RF Performance Projections of Graphene FETs vs. Silicon MOSFETs

Saul Rodriguez, Sam Vaziri, Mikael Ostling +3

A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio fre…