Surface structure of Bi2Se3(111) determined by low-energy electron diffraction and surface X-ray diffraction

Abstract

The surface structure of the prototypical topological insulator Bi2Se3 is determined by low-energy electron diffraction and surface X-ray diffraction at room temperature. Both approaches show that the crystal is terminated by an intact quintuple layer. Specifically, an alternative termination by a bismuth bilayer is ruled out. Surface relaxations obtained by both techniques are in good agreement with each other and found to be small. This includes the relaxation of the van der Waals gap between the first two quintuple layers.

References in corpus (10)

• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime
• Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
• Large tuneable Rashba spin splitting of a two-dimensional electron gas in Bi2Se3
• Emergent quantum confinement at topological insulator surfaces
• Simultaneous quantization of bulk conduction and valence states through adsorption of nonmagnetic impurities on Bi2Se3
• Spin-orbit interaction effect in the electronic structure of \BiTe \ observed by angle-resolved photoemission spectroscopy
• Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering
• Quasiparticle Dynamics in Reshaped Helical Dirac Cone of Topological Insulators
• Splitting in the Fermi surface of ZrTe_3: a surface charge density wave system

Cited by in corpus (14)

• Direct Measurement of Surface Transport on a Bulk Topological Insulator
• Intra- and Interband Electron Scattering in the Complex Hybrid Topological Insulator Bismuth Bilayer on Bi${}_2$Se${}_3$
• Absence of superconductivity in ultra-thin layers of FeSe synthesized on a topological insulator
• Termination of Single Crystal Bi2Se3 Surfaces Prepared by Various Methods
• Preparation of clean surfaces and Se vacancy formation in Bi${}_2$Se${}_3$ by ion bombardment and annealing
• Surface Structure of In Situ Cleaved Single Crystal Bi2Se3 Measured by Low Energy Ion Scattering
• The growth of bismuth on Bi${}_2$Se${}_3$ and the stability of the first bilayer
• Spatial Distribution of Topological Surface State Electrons in Bi${}_2$Se${}_3$ Probed by Na${}^{+}$ Low Energy Ion Scattering
• Spatial Distribution of Topological Surface State Electrons in Bi${}_2$Te${}_3$ Probed by Low Energy Na${}^{+}$ Ion Scattering
• Band structure of Bi surfaces formed on Bi2Se3 upon exposure to air
• Conductance Oscillations in a Topological Insulator-Disordered Superconductor Hybrid Interface
• Halogen adsorption and reaction with Bi${}_2$(Se,Te)${}_3$ and Bi/Bi${}_2$(Se,Te)${}_3$
• Aging of the surface of Bi(2)Se(3)
• Tracking the surface atomic motion in a coherent phonon oscillation