Absence of superconductivity in ultra-thin layers of FeSe synthesized on a topological insulator
arXiv:1606.05738 · doi:10.1103/PhysRevB.94.125437
Abstract
The structural and electronic properties of FeSe ultra-thin layers on BiSe have been investigated with a combination of scanning tunneling microscopy and spectroscopy and angle-resolved photoemission spectroscopy. The FeSe multi-layers, which are predominantly 3-5 monolayers (ML) thick, exhibit a hole pocket-like electron band at \barΓ and a dumbbell-like feature at \bar{M}, similar to multi-layers of FeSe on SrTiO. Moreover, the topological state of the Bi2Se3 is preserved beneath the FeSe layer, as indicated by a heavily \it{n}-doped Dirac cone. Low temperature STS does not exhibit a superconducting gap for any investigated thickness down to a temperature of 5 K.
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- Step-edge assisted large scale FeSe monolayer growth on epitaxial Bi2Se3 thin films
- Structural and electronic properties of ultrathin FeSe films grown on BiSe(0001) studied by STM/STS
- Electronic Structure of FeTe bulk crystals and epitaxial FeTe thin films on BiTe
- Evidence for a two-fold symmetric superconducting gap in a monolayer of FeSeTe on a topological insulator
- Fragility of the Dirac Cone Splitting in Topological Crystalline Insulator Heterostructures
- Moire Superlattice Modulations in Single-Unit-Cell FeTe Films Grown on NbSe2 Single Crystals