Strain tuning of topological band order in cubic semiconductors

Abstract

We theoretically explore the possibility of tuning the topological order of cubic diamond/zinc-blende semiconductors with external strain. Based on the tight-binding model, we analyze the evolution of the cubic semiconductor band structure under hydrostatic or biaxial lattice expansion, by which a generic guiding principle is established that lattice \emph{expansion} can induce a topological phase transition of small band-gap cubic semiconductors via a band inversion, and further breaking of the cubic symmetry leads to a topological insulating phase. Using density functional theory calculations, we demonstrate that a prototype topological trivial semiconductor, InSb, is converted to a nontrivial topological semiconductor with a 2%-3% biaxial lattice expansion.

4 pages, 3 figures

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• Three-dimensional topological insulators: A review on host materials
• First principles prediction of structural and electronic properties of TlxIn(1-x)N alloy
• Pressure driven Weyl-topological insulator phase transition in Weyl semimetal SrSi${}_2$
• Non-necessity of band inversion process in 2D topological insulators for bulk gapless states and topological phase transitions
• Mapping of Electronic Band Gap along the Axis of Single InAs/InSbxAs1-x Heterostructured Nanowire