Pressure driven Weyl-topological insulator phase transition in Weyl semimetal SrSi
arXiv:2305.15980 · doi:10.5488/CMP.26.23707
Abstract
Using DFT-based first-principles calculations, we demonstrate the tuning of the electronic structure of Weyl semimetal SrSi via external uniaxial strain. The uniaxial strain facilitates the opening of bandgap along -X direction and subsequent band inversion between Si and Sr orbitals. Z invariants and surface states reveal conclusively that SrSi under uniaxial strain is a strong topological insulator. Hence, uniaxial strain drives the semimetallic SrSi into fully gapped topological insulating state depicting a semimetal to topological insulator phase transition. Our results highlight the suitability of uniaxial strain to gain control over the topological phase transitions and topological states in SrSi.
arXiv comment11 pages, 8 figures
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