Optical conductivity and band gap in the double-Weyl candidate SrSi2 at ambient pressure
arXiv:2510.04266 · doi:10.1103/y1gj-67wz
Abstract
We probe the possible double-Weyl state in cubic SrSi2 using optical spectroscopy. The complex optical conductivity was measured in a frequency range from 70 to 22 000 cm-1 at temperatures down to 10 K at ambient pressure. The optical response of SrSi2 can be well separated into the intraband (free carriers) and interband contributions. Additionally, four infrared-active phonons are detected. As follows from the optical spectra, the free-carrier density decreases with decreasing temperature, consistent with an activation behaviour. Experimental interband conductivity juxtaposed with ab initio calculations shows that conventional density-functional theory fails to describe the electronic structure of SrSi2 in the vicinity of the Fermi level. A semi-local exchange-correlation potential allows a much better agreement with the experiment, resulting in the trivial (gapped) band structure of SrSi2. The direct gap estimated from the measurements is approximately 40 meV.
6 pages, 4 figures
References in corpus (7)
- Use of X-ray scattering functions in Kramers-Kronig analysis of reflectance
- Nodal Semimetals: A Survey on Optical Conductivity
- Three-dimensional quasi-quantized Hall insulator phase in SrSi2
- Chiral Topological Phononic Quasiparticles in Enantiomeric Crystals SrSi and BaSi
- Stability of Weyl node merging processes under symmetry constraints
- Observation of pressure-induced Weyl state and superconductivity in a chirality-neutral Weyl semimetal candidate SrSi2
- Pressure driven Weyl-topological insulator phase transition in Weyl semimetal SrSi