Non-necessity of band inversion process in 2D topological insulators for bulk gapless states and topological phase transitions
arXiv:1710.10902 · doi:10.1103/PhysRevB.96.201110
Abstract
In commonly employed models for 2D topological insulators, bulk gapless states are well known to form at the band inversion points where the degeneracy of the states is protected by symmetries. It is thus sometimes quite tempting to consider this feature, the occurrence of gapless states, a result of the band inversion process under protection of the symmetries. Similarly, the band inversion process might even be perceived as necessary to induce 2D topological phase transitions. To clarify these misleading perspectives, we propose a simple model with a flexible Chern number to demonstrate that the bulk gapless states emerge at the phase boundary of topological phase transitions, despite the absence of band inversion process. Furthermore, the bulk gapless states do not need to occur at the special -points protected by symmetries. Given the significance of these fundamental \textit{conceptual} issues and their wide-spread influence, our clarification should generate strong general interests and significant impacts. Furthermore, the simplicity and flexibility of our general model with an arbitrary Chern number should prove useful in a wide range of future studies of topological states of matter.
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