Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling

Abstract

We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional (3D) topological insulator (TI). We derive approximate analytical expressions for the low-field magnetoresistance as a function of bulk doping and bulk-surface tunneling rate. Our results reveal parameter regimes for both weak localization and weak antilocalization, and include diffusive Weyl semimetals as a special case.

After publication, we have noticed and corrected two small but potentially misleading typographic errors in Eqs. (2.27) and (2.29), where the definitions of τ_s and τ_v were mistakenly switched. Once these typographic errors are fixed, all the results remain unchanged. An Erratum will be published in PRB

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