Coulomb drag in graphene - boron nitride heterostructures: the effect of virtual phonon exchange
arXiv:1206.0308 · doi:10.1103/PhysRevB.86.125448
Abstract
For a system of two spatially separated monoatomic graphene layers encapsulated in hexagonal boron nitride, we consider the drag effect between charge carriers in the Fermi liquid regime. Commonly, the phenomenon is described in terms of an interlayer Coulomb interaction. We show that if an additional electron - electron interaction via exchange of virtual substrate phonons is included in the model, the predicted drag resistivity is modified considerably at temperatures above 150 K. The anisotropic crystal structure of boron nitride, with strong intralayer and comparatively weak interlayer bonds, is found to play an important role in this effect.
7 pages, 7 figures
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