Evidence for spin memory in the electron phase coherence in graphene

Abstract

We measure the dependence of the conductivity of graphene as a function of magnetic field, temperature and carrier density and discover a saturation of the dephasing length at low temperatures that we ascribe to spin memory effects. Values of the spin coherence length up to eight microns are found to scale with the mean free path. We consider different origins of this effect and suggest that it is controlled by resonant states that act as magnetic-like defects. By varying the level of disorder, we demonstrate that the spin coherence length can be tuned over an order of magnitude.

arXiv comment4 pages, 4 figures

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• Approaching magnetic ordering in graphene materials by FeCl${}_3$ intercalation
• Phase Coherent Transport in Graphene Nanoribbons and Graphene Nanoribbon Arrays
• Resonant scattering by magnetic impurities as a model for spin relaxation in bilayer graphene
• Spin and Valley Noise in Two-Dimensional Dirac Materials
• Influence of impurity spin dynamics on quantum transport in epitaxial graphene
• Thermal quantum correlations and Teleportation in a Graphene Sheet
• Enhanced quantum coherence in graphene caused by Pd cluster deposition
• Specular electron focusing between gate-defined quantum point contacts in bilayer graphene
• A ballistic electron source with magnetically-controlled valley polarization in bilayer graphene
• Spin dependent quantum interference in non-local graphene spin valves
• Simple mechanism that breaks the Hall effect linearity at low temperatures
• Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures
• Nuclear-induced dephasing and signatures of hyperfine effects in isotopically purified ${}^{13}$C graphene
• Polarization amplification by spin-doping in nanomagnetic/graphene hybrid systems
• Influence of spin dynamics of defects on weak localization in paramagnetic 2D metals
• Magnetoresistance of composites based on graphitic disks and cones