Seebeck Effect in Magnetic Tunnel Junctions

Abstract

Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, i.e., the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect. It is observed when a magnetic configuration changes the charge based Seebeck coefficient. In particular, the Seebeck coefficient changes during the transition from a parallel to an antiparallel magnetic configuration in a tunnel junction. In that respect, it is the analog to the tunneling magnetoresistance. The Seebeck coefficients in parallel and antiparallel configuration are in the order of the voltages known from the charge-Seebeck effect. The size and sign of the effect can be controlled by the composition of the electrodes' atomic layers adjacent to the barrier and the temperature. Experimentally, we realized 8.8 % magneto-Seebeck effect, which results from a voltage change of about -8.7 μV/K from the antiparallel to the parallel direction close to the predicted value of -12.1 μV/K.

16 pages, 7 figures, 2 tables

References in corpus (8)

• Spin Caloritronics
• Spin Seebeck insulator
• Observation of the Spin-Seebeck Effect in a Ferromagnetic Semiconductor
• Thermally driven spin injection from a ferromagnet into a non-magnetic metal
• Tunneling magneto thermo power in magnetic tunnel junction nanopillars
• Spin caloritronics in magnetic tunnel junctions: Ab initio studies
• Implementation of a non-equilibrium Green's function method to calculate spin transfer torque
• Direct imaging of the structural change generated by dielectric breakdown in MgO based magnetic tunnel junctions

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