Tunneling magneto thermocurrent in CoFeB/MgO/CoFeB based magnetic tunnel junctions
arXiv:1304.4798 · doi:10.1063/1.4811737
Abstract
We study the tunneling magneto thermopower and tunneling magneto thermocurrent of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ). The devices show a clear change of the thermoelectric properties upon reversal of the magnetisation of the CoFeB layers from parallel to the antiparallel orientation. When switching from parallel to antiparallel the thermopower increases by up to 55% where as the thermocurrent drops by 45%. These observations can be well explained by the Onsager relations taking into account the tunneling magneto resistance of the MTJ. These findings contrast previous studies on AlO based MTJ systems, revealing tunneling magneto thermo power but no tunneling magneto thermocurrent.
9 pages, 3 figures
References in corpus (4)
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- Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions
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Cited by in corpus (7)
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- Enhancement of thermovoltage and tunnel magneto-Seebeck effect in CoFeB based magnetic tunnel junctions by variation of the MgAlO and MgO barrier thickness
- On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect
- Tunneling Magneto-Thermopower in Magnetic Tunnel Junctions
- Thermal conductivity of thin insulating films determined by tunnel magneto-Seebeck effect measurements and finite-element modeling
- Pumping laser excited spins through MgO barriers