activity
20082017
most citedMemristive switching of MgO based magnetic tunnel junctions

76 citations · 190 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2017★ 6 cited

MnSi-nanostructures obtained from thin films: magnetotransport and Hall effect

D. Schroeter, N. Steinki, M. Schilling +6

We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, thin film and nanostructured MnSi. In order to set our results in relation to p…

cond-mat.mes-hall2016★ 23 cited

Nano scale thermo-electrical detection of magnetic domain wall propagation

Patryk Krzysteczko, James Wells, Alexander Fernandez Scarioni +12

In magnetic nanowires with perpendicular magnetic anisotropy (PMA) magnetic domain walls (DW) are narrow and can move rapidly driven by current induced torques. This enables import…

cond-mat.mes-hall2014★ 21 cited

Domain wall magneto-Seebeck effect

Patryk Krzysteczko, Xiukun Hu, Niklas Liebing +2

The interplay between charge, spin, and heat currents in magnetic nano systems subjected to a temperature gradient has lead to a variety of novel effects and promising applications…

cond-mat.mtrl-sci2013★ 12 cited

Magneto-thermoelectric figure of merit of Co/Cu multilayers

X. K. Hu, P. Krzysteczko, N. Liebing +7

The switching of the magnetization configurations of giant magnetoresistance multilayer stacks not only changes the electric and thermal conductivities, but also the thermopower. W…

cond-mat.mes-hall2013★ 24 cited

Tunneling magneto thermocurrent in CoFeB/MgO/CoFeB based magnetic tunnel junctions

Niklas Liebing, Santiago Serrano-Guisan, Patryk Krzysteczko +5

We study the tunneling magneto thermopower and tunneling magneto thermocurrent of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ). The devices show a clear change of the thermoelec…

cond-mat.mtrl-sci2009★ 76 cited

Memristive switching of MgO based magnetic tunnel junctions

P. Krzysteczko, G. Reiss, A. Thomas

Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices sho…