Epitaxial growth of FeSeTe thin films on CaF substrates with high critical current density
arXiv:1104.0477 · doi:10.1143/APEX.4.053101
Abstract
In-situ epitaxial growth of FeSeTe thin films is demonstrated on a non-oxide substrate CaF. Structural analysis reveals that compressive stress is moderately added to 36-nm thick FeSeTe, which pushes up the critical temperature above 15 K, showing higher values than that of bulk crystals. Critical current density at = 4.5 K reaches 5.9 x 10 Acm at = 10 T, and 4.2 x 10 Acm at = 14 T. These results indicate that fluoride substrates have high potential for the growth of iron-based superconductors in comparison with popular oxide substrates.
9 pages, 3 figures, to be published in Applied Physics Express 4, 053101 (2011)
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- Realization of epitaxial thin films of the superconductor K-doped BaFeAs
- Superconducting fluctuations in FeSeTe thin films probed via microwave spectroscopy
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- Picosecond Trajectory of Two-dimensional Vortex Motion in FeSeTe Visualized by Terahertz Second Harmonic Generation
- Studies of superconductivity of Fe chalcogenides in films grown by PLD technique