Microscopic analysis of the chemical reaction between Fe(Te,Se) thin films and underlying CaF
arXiv:1208.3287 · doi:10.1088/0953-2048/26/7/075002
Abstract
To understand the chemical reaction at the interface of materials, we performed a transmission electron microscopy (TEM) observation in four types of Fe(Te,Se) superconducting thin films prepared on different types of substrates: CaF2 substrate, CaF2 substrate with a CaF2 buffer layer, CaF2 substrate with a FeSe buffer layer, and a LaAlO3 substrate with a CaF2 buffer layer. Based on the energy-dispersive X-ray spectrometer (EDX) analysis, we found possible interdiffusion between fluorine and selenium that has a strong influence on the superconductivity in Fe(Te,Se) films. The chemical interdiffusion also plays a significant role in the variation of the lattice parameters. The lattice parameters of the Fe(Te,Se) thin films are primarily determined by the chemical substitution of anions, and the lattice mismatch only plays a secondary role.
30 pages, 9 figure
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Cited by in corpus (8)
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- Enhancement of the Superconducting Transition Temperature in FeSe Epitaxial Thin Films by Anisotropic Compression
- Highly effective and isotropic pinning in epitaxial Fe(Se,Te) thin films grown on CaF2 substrates
- Versatile fluoride substrates for Fe-based superconducting thin films
- High performance FeSe0.5Te0.5 thin films grown at low temperature by pulsed laser deposition
- Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin ilms
- The influence of the in-plane lattice constant on the superconducting transition temperature of FeSe0.7Te0.3 thin films
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