Enhancement of the Superconducting Transition Temperature in FeSe Epitaxial Thin Films by Anisotropic Compression
arXiv:1309.3454 · doi:10.1063/1.4826945
Abstract
In order to investigate the effects of in-plane strain on the superconductivity of FeSe, epitaxial thin films of FeSe were fabricated on CaF substrates. The films are compressed along the a-axis and their superconducting transition temperatures reach 11.4 K, which is approximately 1.5 times higher than that of bulk crystals. The values are weakly dependent on the ratio of the lattice constants, / , compared to that of Fe(Se,Te). Our results indicate that even a binary system FeSe has room for improvement, and will open a new route for the application of Fe-based superconductors.
4 pages, 3 figures
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Cited by in corpus (16)
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- Suppression of superconductivity and enhanced critical field anisotropy in thin flakes of FeSe
- Strain-tuning of nematicity and superconductivity in single crystals of FeSe
- Systematic study on transport properties of FeSe thin films with various degrees of strain
- Growth of superconducting epitaxial films of sulfur substituted FeSe via pulsed laser deposition
- Band structure and charge doping effects of potassium-adsorbed FeSe/SrTiO3 system
- Investigation of Transport Properties for FeSeTe Thin Films under Magnetic Fields
- Insulator-like behavior coexisting with metallic electronic structure in strained FeSe thin films grown by molecular beam epitaxy
- Superconducting fluctuations in FeSeTe thin films probed via microwave spectroscopy
- Microstructural control of the transport properties of -FeSe films grown by sputtering
- Multiple energy gap features of superconducting FeSe investigated by tunneling spectroscopy
- Sulfur-induced magnetism in FeSeS thin films on LaAlO revealed by muon spin rotation/relaxation
- Stabilization and heteroepitaxial growth of metastable tetragonal FeS thin films by pulsed laser deposition
- Growth and microwave properties of FeSe thin films and comparison with Fe(Se,Te)