Superconductivity of FeSe0.5Te0.5 Thin Films Grown by Pulsed Laser Deposition

Abstract

FeSe0.5Te0.5 thin films with PbO-type structure are successfully grown on MgO(100) and LaSrAlO4(001) substrates from FeSe0.5Te0.5 or FeSe0.5Te0.75 polycrystalline targets by pulsed-laser deposition. The film deposited on the MgO substrate (film thickness ~ 55 nm) shows superconductivity at 10.6 K (onset) and 9.2 K (zero resistivity). On the other hand, the film deposited on the LaSrAlO4 substrate (film thickness ~ 250 nm) exhibits superconductivity at 5.4 K (onset) and 2.7 K (zero resistivity). This suggests the strong influence of substrate materials and/or the c-axis length to superconducting properties of FeSe0.5Te0.5 thin films.

24 pages, 5 figures

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• High Critical Current Density 4 MA/cm2 in Co-Doped BaFe2As2 Epitaxial Films Grown on (La, Sr)(Al, Ta)O3 Substrates without Buffer Layers
• Enhancement of the Superconducting Transition Temperature in FeSe Epitaxial Thin Films by Anisotropic Compression
• Thin Film Growth and Device Fabrication of Iron-Based Superconductors
• Microscopic analysis of the chemical reaction between Fe(Te,Se) thin films and underlying CaF${}_2$
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• Systematic study on transport properties of FeSe thin films with various degrees of strain
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• Mobility analysis of FeTe thin films
• Transport and magnetic properties of Co-doped BaFe_{2}As_{2} epitaxial thin films
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• Sulfur-induced magnetism in FeSe${}_{1-x}$S${}_x$ thin films on LaAlO${}_3$ revealed by muon spin rotation/relaxation
• Fabrication of oxide/FeSe multilayer films using the PLD technique