Charge carrier dynamics of FeSe thin film investigated by terahertz magneto-optical spectroscopy

Abstract

We performed terahertz magneto-optical spectroscopy of FeSe thin film to elucidate the charge carrier dynamics. The measured diagonal (longitudinal) and off-diagonal (Hall) conductivity spectra are well reproduced by two-carrier Drude model, from which the carrier densities, scattering times and effective masses of electron and hole carriers are determined in a wide range of temperature. The hole density decreases below the structural transition temperature while electron density increases, which is attributed to the band structure modification in the electronic nematic phase. The scattering time of the hole carrier becomes substantially longer than that of the electron at lower temperature, which accounts for the increase of the positive dc Hall coefficient at low temperature.

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Cited by in corpus (5)

• Close correlation between superconducting transition temperatures and carrier densities in Te- and S-substituted FeSe thin films
• Unconventional localization of electrons inside of a nematic electronic phase
• Relationships between Superconductivity and Nematicity in FeSe${}_{1-x}$Te${}_x$ ($x=0-0.5$) Films Studied by Complex Conductivity Measurements
• Studies of superconductivity of Fe chalcogenides in films grown by PLD technique
• Evolution of charge dynamics in FeSe${}_{1-x}$Te${}_x$: Effects of electronic correlations and nematicity