Epitaxial growth and anisotropy of La(O,F)FeAs thin films deposited by Pulsed Laser Deposition
arXiv:0808.1864 · doi:10.1088/0953-2048/21/12/122001
Abstract
LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by PLD. Room temperature deposition and post annealing of the films yield nearly phase pure films with a pronounced c-axis texture and a strong biaxial in-plane orientation. Transport measurements show metallic resistance and onset of superconductivity at 11 K. Hc2(T) was determined by resistive measurements and yield Hc2 values of 3 T at 3.6 K for B||c and 6 T at 6.4 K for B||ab.
11 pages, 5 figures
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- Atomically-flat, chemically-stable, superconducting epitaxial thin film of iron-based superconductor, cobalt-doped BaFeAs
- Critical current scaling and anisotropy in oxypnictide superconductors
- Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy
- DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films
- Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition
- Lessons from Oxypnictide Thin Films