Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition

Abstract

We heteroepitaxially grew cobalt-doped BaFe2As2 films on (La,Sr)(Al,Ta)O3 single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray diffraction rocking curves, we quantitatively analyzed the crystallinity of each film. We found that the optimal deposition rate, which could be tuned by pulse energy, was independent of laser wavelength. The high-quality film grown at the optimal pulse energy (i.e., the optimum deposition rate) exhibited high critical current density over 1 MA/cm2 irrespective of the laser wavelength.

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Cited by in corpus (6)

• Recent advances in iron-based superconductors toward applications
• High critical-current density with less anisotropy in BaFe2(As,P)2 epitaxial thin films: Effect of intentionally grown c-axis vortex-pinning centers
• Enhanced critical-current in P-doped BaFe2As2 thin films on metal substrates arising from poorly aligned grain boundaries
• Superconductivity at 48 K of heavily hydrogen-doped SmFeAsO epitaxial films grown by topotactic chemical reaction using CaH2
• BaFe2(As1-xPx)2 (x = 0.22-0.42) thin films grown on practical metal-tape substrates and their critical current densities
• Novel solid-phase epitaxy for multi-component materials with extremely high vapor pressure elements: An application to KFe2As2