Explicit drain-current model of graphene field-effect transistors targeting analog and radio-frequency applications

Abstract

We present a compact physics-based model of the current-voltage characteristics of graphene field-effect transistors, of especial interest for analog and radio-frequency applications where bandgap engineering of graphene could be not needed. The physical framework is a field-effect model and drift-diffusion carrier transport. Explicit closed-form expressions have been derived for the drain current covering continuosly all operation regions. The model has been benchmarked with measured prototype devices, demonstrating accuracy and predictive behavior. Finally, we show an example of projection of the intrinsic gain as a figure of merit commonly used in RF /analog applications.

10 pages, 4 figures

References in corpus (2)

• Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
• Graphene field-effect transistors based on boron nitride gate dielectrics

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