Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot
arXiv:1103.0320 · doi:10.1103/PhysRevLett.107.076805
Abstract
We report the observation of Kondo physics in a spin- 3/2 hole quantum dot. The dot is formed close to pinch-off in a hole quantum wire defined in an undoped AlGaAs/GaAs heterostructure. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the Zeeman spin-splitting of the zero-bias peak in the differential conductance is independent of gate voltage. Second, this splitting is twice as large as the splitting for the lowest one-dimensional subband. We show that the Zeeman splitting of the zero-bias peak is highly-anisotropic, and attribute this to the strong spin-orbit interaction for holes in GaAs.
4 pages, 4 figures
References in corpus (9)
- Orbital Kondo effect in carbon nanotubes
- Zeeman splitting in ballistic hole quantum wires
- Ballistic transport in induced one-dimensional hole systems
- Probing the microscopic structure of bound states in quantum point contacts
- Non-Kondo zero-bias anomaly in quantum wires
- Piezoelectric rotator for studying quantum effects in semiconductor nanostructures at high magnetic fields and low temperatures
- Hole-trapping by Ni, Kondo effect and electronic phase diagram in non-superconducting Ni-substituted La2-xSrxCu1-yNiyO4
- Interplay between one-dimensional confinement and crystallographic anisotropy in ballistic hole quantum wires
- Electronic and spin properties of hole point contacts
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