Electronic and spin properties of hole point contacts

Abstract

We have studied theoretically the effect of a tuneable lateral confinement on two-dimensional hole systems realised in III-V semiconductor heterostructures. Based on the 4x4 Luttinger description of the valence band, we have calculated quasi-onedimensional (quasi-1D) hole subband energies and anisotropic Lande g-factors. Confinement-induced band mixing results in the possibility to manipulate electronic and spin properties of quasi-1D hole states over a much wider range than is typically possible for confined conduction-band electrons. Our results are relevant for recent experiments where source-drain-bias spectroscopy was used to measure Zeeman splitting of holes in p-type quantum point contacts.

arXiv comment4 pages, 3 figures, LaTex Wiley-VCH style (class files included), accepted for publication in proceedings of PASPS-IV

References in corpus (2)

• Conductance quantization and the 0.7x2e2/h conductance anomaly in one-dimensional hole systems
• Giant anisotropy of Zeeman splitting of quantum confined acceptors in Si/Ge

Cited by in corpus (8)

• What lurks below the last plateau: Experimental studies of the 0.7 x 2e^2/h conductance anomaly in one-dimensional systems
• Large variations in the hole spin splitting of quantum-wire subband edges
• Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot
• 0.7 Structure and Zero Bias Anomaly in Ballistic Hole Quantum Wires
• Characterization of spin-orbit interactions of GaAs heavy holes using a quantum point contact
• Interplay between one-dimensional confinement and crystallographic anisotropy in ballistic hole quantum wires
• Rashba-coupling modelling for two-dimensional and high-order Rashba Hamiltonian for one-dimensional confined heavy holes
• Charge transport by modulating spin-orbit gauge fields for quasi-onedimensional holes