Single crystal silicon capacitors with low microwave loss in the single photon regime

Abstract

We have fabricated superconducting microwave resonators in a lumped element geometry using single crystal silicon dielectric parallel plate capacitors with C >2 pF. Aluminum devices with resonant frequencies between 4.0 and 6.5 GHz exhibited an average internal quality factor Q_i of 2 x 10^5 in the single photon excitation regime at T = 20 mK. Attributing all the observed loss to the capacitive element, our measurements correspond to a loss tangent of intrinsic silicon of 5 x 10^-6. This level of loss is an order of magnitude lower than is currently observed in structures incorporating amorphous dielectric materials, thus making single crystal silicon capacitors an attractive, robust route for realizing long-lived quantum circuits.

References in corpus (9)

• Decoherence in Josephson Qubits from Dielectric Loss
• Microwave Dielectric Loss at Single Photon Energies and milliKelvin Temperatures
• Low- and high-frequency noise from coherent two-level systems
• Decoherence in Josephson-junction qubits due to critical current fluctuations
• Reducing quantum-regime dielectric loss of silicon nitride for superconducting quantum circuits
• Quasiparticle decay rate of Josephson charge qubit oscillations
• Low-loss superconducting resonant circuits using vacuum-gap-based microwave components
• Loss Dependence on Geometry and Applied Power in Superconducting Coplanar Resonators
• Approaching ideal weak link behavior with three dimensional aluminum nanobridges

Cited by in corpus (24)

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• Improving the Quality Factor of Microwave Compact Resonators by Optimizing their Geometrical Parameters
• Hexagonal Boron Nitride (hBN) as a Low-loss Dielectric for Superconducting Quantum Circuits and Qubits
• Interplay between kinetic inductance, non-linearity and quasiparticle dynamics in granular aluminum MKIDs
• Comparison of Dielectric Loss in Titanium Nitride and Aluminum Superconducting Resonators
• Fano Interference in Microwave Resonator Measurements
• Superconducting qubits on silicon substrates for quantum device integration
• Evidence for hydrogen two-level systems in atomic layer deposition oxides
• An analysis method for transmission measurements of superconducting resonators with applications to quantum-regime dielectric-loss measurements
• Dielectric loss extraction for superconducting microwave resonators
• Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation
• 1/f noise of Josephson-junction-embedded microwave resonators at single photon energies and millikelvin temperatures
• Coherent Josephson phase qubit with a single crystal silicon capacitor
• Compact superconducting microwave resonators based on Al-AlOx-Al capacitor
• Normal Metal Hot-Electron Nanobolometer with Johnson Noise Thermometry Readout
• Determination of Low Loss in Isotopically Pure Single Crystal ${}^{28}$Si at Low Temperatures and Single Microwave Photon Energy
• Characterization of the low electric field and zero-temperature two-level-system loss in hydrogenated amorphous silicon
• Material matters in superconducting qubits
• Geometry dependence of TLS noise and loss in a-SiC:H parallel plate capacitors for superconducting microwave resonators
• Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures
• Anomalous Loss Reduction Below Two-Level System Saturation in Aluminum Superconducting Resonators