Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures

Abstract

Our study shows that deposited Ge and Si dielectric thin-films can exhibit low microwave losses at near single-photon powers and sub-Kelvin temperatures ($\approx$40 mK). This low loss enables their use in a wide range of devices, including low-loss coplanar, microstrip, and stripline resonators, as well as layers for device isolation, inter-wiring dielectrics, and passivation in microwave and Josephson junction circuit fabrication. We use coplanar microwave resonator structures with narrow trace widths of 2-16 $\mu \text{m}$ to maximize the sensitivity of loss tangent measurements to the interface and properties of the deposited dielectrics, rather than to optimize the quality factor. In this configuration, thermally-evaporated $\approx 1\mu \text{m}$ thick amorphous germanium (a-Ge) films deposited on Si (100) have a single photon loss tangent of $1-2\times 10^{-6}$ and, $9\mu \text{m}$-thick chemical vapor deposited (CVD) homoepitaxial Si has a single photon loss tangent of $0.6-2\times 10^{-5}$. Interface contamination limits the loss in these devices.

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Cited by in corpus (2)

• Characterization of the low electric field and zero-temperature two-level-system loss in hydrogenated amorphous silicon
• High temporal stability of niobium superconducting resonators by surface passivation with organophosphonate self-assembled monolayers