246 citations · 591 across the 12 of their papers we have counts for
12 papers
Ge thin-films with tantalum diffusion-barriers for use in Nb-based superconductor technology
C. Kopas, S. Zhang, J. Gonzales +4
Germanium thin films are an excellent candidate for use as a low-loss dielectric in superconducting microwave resonators, a low-loss inter-layer metal wiring dielectric, and passiv…
Characterization of the Chemical and Electrical Properties of Defects at the Niobium-Silicon Interface
Cameron Kopas, Madhu Krishna Murthy, Christopher Gregory +4
The nature and concentration of defects near niobium-silicon interfaces prepared with different silicon surface treatments were characterized using current-voltage (I-V), deep leve…
Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures
Cameron J. Kopas, Justin Gonzales, Shengke Zhang +5
Our study shows that deposited Ge and Si dielectric thin-films can exhibit low microwave losses at near single-photon powers and sub-Kelvin temperatures (40 mK). This low…
Effect of -particle irradiation on a NdFeAs(O,F) thin film
C. Tarantini, K. Iida, N. Sumiya +6
The effect of -particle irradiation on a NdFeAs(O,F) thin film has been investigated to determine how the introduction of defects affects basic superconducting properties, inclu…
Effect of stoichiometry on oxygen incorporation in MgB2 thin films
R K Singh, Y Shen, R Gandikota +2
The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering sp…
Effect of Rb and Cs-doping on superconducting properties of MgB2 thin films
R K Singh, Y Shen, R Gandikota +4
Our Rutherford backscattering spectrometry (RBS) study has found that concentrations up to 7 atomic percent of Rb and Cs can be introduced to a depth of ~700 A in MgB2 thin films b…