24 citations · 35 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2017★ 24 cited
MOCVD growth of N-polar GaN on on-axis sapphire substrate: impact of AlN nucleation layer on GaN surface hillock density
Jonathan Marini, Jeffrey Leathersich, Isra Mahaboob +4
We report on the impact of growth conditions on surface hillock density of N-polar GaN grown on nominally on-axis (0001) sapphire substrate by metal organic chemical vapor depositi…
cond-mat.mtrl-sci1998★ 11 cited
Influence of the exchange reaction on the electronic structure of GaN/Al junctions
S. Picozzi, A. Continenza, S. Massidda +2
Ab-initio calculations have been used to study the influence of the interface morphology and, notably, of the exchange reaction on the electronic properties of Al/GaN (100) interfa…