Effect of damage by 2-MeV He ions and annealing on Hc2 in MgB2 thin films

Abstract

The effect of damage induced by 2-MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity, and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity, and produces maxima in both Hc2(0)-perpendicular and Hc2(0)-parallel. Below Tcs of about 25 K, Hc2(0) depends roughly linearly on Tc, while the anisotropy of Hc2(0) decreases as Tc decreases. Annealing the films reproduces the Tc vs. residual resistivity dependence but not the Hc2(0) values induced by damage.

arXiv comment15 pages including one table and three figures; Submitted to Applied Physics Letters

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Cited by in corpus (12)

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• Growth of high quality large area MgB2 thin films by reactive evaporation
• Superconducting and Normal State Properties of Neutron Irradiated MgB2
• Systematic study of disorder induced by neutron irradiation in MgB2 thin films
• Intraband versus interband scattering rate effects in neutron irradiated MgB2
• Effect of oxygen incorporation on normal and superconducting properties of MgB2 films
• Effect of stoichiometry on oxygen incorporation in MgB2 thin films
• Influence of carbon-ion irradiation on the superconducting critical properties of MgB${}_2$ thin films
• Effect of $\alpha$-particle irradiation on a NdFeAs(O,F) thin film
• Application prospects of MgB${}_2$ in view of its basic properties
• Preparation and properties of amorphous MgB${}_2$/MgO superstructures: A new model disordered superconductor
• Effect of Rb and Cs-doping on superconducting properties of MgB2 thin films