Influence of carbon-ion irradiation on the superconducting critical properties of MgB thin films
arXiv:1811.05814 · doi:10.1088/1361-6668/aaf2c4
Abstract
We investigate the influence of carbon-ion irradiation on the superconducting critical properties of MgB thin films. MgB films of two thicknesses viz. 400 nm (MB400nm) and 800 nm (MB800nm) were irradiated by 350 keV C ions having a wide range of fluence, 1 x 10 - 1 x 10 C atoms/cm. The mean projected range () of 350 keV C ions in MgB is 560 nm, thus the energetic C ions will pass through the MB400nm, whereas the ions will remain into the MB800nm. The superconducting transition temperature (), upper critical field (), -axis lattice parameter, and corrected residual resistivity () of both the films showed similar trends with the variation of fluence. However, a disparate behavior in the superconducting phase transition was observed in the MB800nm when the fluence was larger than 1 x 10 C atoms/cm because of the different Tcs between the irradiated and non-irradiated parts of the film. Interestingly, the superconducting critical properties, such as , , and , of the irradiated MgB films, as well as the lattice parameter, were almost restored to those in the pristine state after a thermal annealing procedure. These results demonstrate that the atomic lattice distortion induced by C-ion irradiation is the main reason for the change in the superconducting properties of MgB films.
31 pages, 12 figures, submitted to Superconductor Science and Technology