Coherent Josephson phase qubit with a single crystal silicon capacitor

Abstract

We have incorporated a single crystal silicon shunt capacitor into a Josephson phase qubit. The capacitor is derived from a commercial silicon-on-insulator wafer. Bosch reactive ion etching is used to create a suspended silicon membrane; subsequent metallization on both sides is used to form the capacitor. The superior dielectric loss of the crystalline silicon leads to a significant increase in qubit energy relaxation times. T1 times up to 1.6 micro-second were measured, more than a factor of two greater than those seen in amorphous phase qubits. The design is readily scalable to larger integrated circuits incorporating multiple qubits and resonators.

5 pages, 4 figures

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Cited by in corpus (7)

• Towards understanding two-level-systems in amorphous solids -- Insights from quantum circuits
• Miniaturizing transmon qubits using van der Waals materials
• Tunable-Cavity QED with Phase Qubits
• Superconducting qubits on silicon substrates for quantum device integration
• The influence of pinholes and weak-points in aluminium-oxide Josephson junctions
• Simulating dynamical quantum Hall effect with superconducting qubits
• Material matters in superconducting qubits