Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

Abstract

We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 10^10 in the Hall resistance quantization measurements.

References in corpus (5)

• The electronic properties of graphene
• Ab initio Study of Graphene on SiC
• Density of states and zero Landau level probed through capacitance of graphene
• Charge transfer between epitaxial graphene and silicon carbide
• Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light

Cited by in corpus (9)

• Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
• Precision comparison of the quantum Hall effect in graphene and gallium arsenide
• Precision quantization of Hall resistance in transferred graphene
• Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
• Towards a Graphene-Based Quantum Impedance Standard
• Impact of graphene quantum capacitance on transport spectroscopy
• Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
• Local breakdown of the quantum Hall effect in narrow single layer graphene Hall devices
• Graphene surpasses GaAs/AlGaAs for the application of the quantum Hall effect in metrology