Electrical Measurement of the Direct Spin Hall Effect in Fe/In_xGa_{1-x}As Heterostructures

Abstract

We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/In_{x}Ga_{1-x}As heterostructures with n-type channel doping (Si) and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the In_{x}Ga_{1-x}As is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the Hall voltage measured by pairs of ferromagnetic contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.

10 pages, submitted to Phys. Rev. Lett

References in corpus (7)

• Dissipationless Quantum Spin Current at Room Temperature
• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Theory of Spin Hall conductivity in n-doped GaAs
• Current-Induced Polarization and the Spin Hall Effect at Room Temperature
• Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions
• Dissipation effects in spin-Hall transport of electrons and holes
• Out-of-plane spin polarization from in-plane electric and magnetic fields

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