Observation of Terahertz Spin Hall Conductivity Spectrum in GaAs with Optical Spin Injection

Abstract

We report the first observation of the spin Hall conductivity spectrum in GaAs at room temperature. Our terahertz polarimetry with a precision of several $\mu$rads resolves the Faraday rotation of terahertz pulses arising from the inverse spin Hall effect of optically injected spin-polarized electrons. The obtained spin Hall conductivity spectrum exhibits an excellent quantitative agreement with theory, demonstrating a crossover in the dominant origin from impurity scattering in the DC regime to the intrinsic Berry-curvature mechanism in the terahertz regime. Our spectroscopic technique opens a new pathway to analyze anomalous transports related to spin, valley, or orbital degrees of freedom.

arXiv comment18 pages, 4 figures

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• Valley polarization dynamics of photoinjected carriers at the band edge in room-temperature silicon studied by terahertz polarimetry
• Unified theory of the photovoltaic Hall effect by field- and light-induced Berry curvatures
• Thermal Responses of Spin Density and Spin Current Induced by Bogoliubov Fermi Surfaces in Proximity Superconductors