Ultrafast magneto-photocurrents in GaAs: Separation of surface and bulk contributions

Abstract

We induce ultrafast magneto-photocurrents in a GaAs crystal employing interband excitation with femtosecond laser pulses at room temperature and non-invasively separate surface and bulk contributions to the overall current response. The separation between the different symmetry contributions is achieved by measuring the simultaneously emitted terahertz radiation for different sample orientations. Excitation intensity and photon energy dependences of the magneto-photocurrents for linearly and circularly polarized excitations reveal an involvement of different microscopic origins, one of which we believe is the inverse Spin-Hall effect. Our experiments are important for a better understanding of the complex momentum-space carrier dynamics in magnetic fields.

References in corpus (4)

• Observation of the inverse spin Hall effect in silicon
• Magneto-Gyrotropic Photogalvanic Effects in Semiconductor Quantum Wells
• Ultrafast magneto-photocurrents in GaAs: Separation of surface and bulk contributions
• THz beam steering by optical coherent control

Cited by in corpus (8)

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• Detection of the anomalous velocity with sub-picosecond time resolution in semiconductor nanostructures
• Edge photogalvanic effect caused by optical alignment of carrier momenta in 2D Dirac materials
• Ultrafast magneto-photocurrents in GaAs: Separation of surface and bulk contributions
• Observation of Terahertz Spin Hall Conductivity Spectrum in GaAs with Optical Spin Injection
• Ultrafast magneto-photocurrents as probe of anisotropy relaxation in GaAs
• Trembling motion of electrons driven by Larmor spin precession