Decoupling Graphene from SiC(0001) via Oxidation
arXiv:1003.5702 · doi:10.1103/PhysRevB.82.041411
Abstract
When epitaxial graphene layers are formed on SiC(0001), the first carbon layer (known as the "buffer layer"), while relatively easy to synthesize, does not have the desirable electrical properties of graphene. The conductivity is poor due to a disruption of the graphene pi-bands by covalent bonding to the SiC substrate. Here we show that it is possible to restore the graphene pi-bands by inserting a thin oxide layer between the buffer layer and SiC substrate using a low temperature, CMOS-compatible process that does not damage the graphene layer.
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- Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer - SiC(0001) Interface
- Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption
- Interface Structure of Graphene on SiC(000-1)
- Towards Topological Quasi-Freestanding Stanene via Substrate Engineering
- Intercalation and desorption of oxygen between graphene and Ru(0001) studied with helium ion scattering
- Formation of a Buffer Layer for Graphene on C-face SiC{0001}
- Formation of Graphene atop a Si adlayer on the C-face of SiC
- Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100)
- Formation of Graphene on SiC(000-1) Surfaces in Disilane and Neon Environments
- Epitaxial Graphene Intercalation: A Route to Graphene Modulation and Unique 2D Materials