130 citations · 132 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2013★ 1 cited
The Equilibrium Shape of Graphene Domains on Ni(111)
Meifang Li, J. B. Hannon, R. M. Tromp +4
We have determined the equilibrium shape of graphene domains grown on Ni(111) via carbon segregation at 925°C. In situ, spatially-resolved electron diffraction measurements were us…
cond-mat.mtrl-sci2011★ 1 cited
Determination of the graphene growth mode on SiC(0001) and SiC(000-1)
J. B. Hannon, M. Copel, R. M. Tromp
We have determined the growth mode of graphene on SiC(0001) and SiC(000-1) using ultra-thin, isotopically-labeled Si13C `marker layers' grown epitaxially on the Si12C surfaces. Few…
cond-mat.mtrl-sci2010★ 130 cited
Decoupling Graphene from SiC(0001) via Oxidation
S. Oida, F. R. McFeely, J. B. Hannon +6
When epitaxial graphene layers are formed on SiC(0001), the first carbon layer (known as the "buffer layer"), while relatively easy to synthesize, does not have the desirable elect…