130 citations · 134 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2011★ 1 cited
Determination of the graphene growth mode on SiC(0001) and SiC(000-1)
J. B. Hannon, M. Copel, R. M. Tromp
We have determined the growth mode of graphene on SiC(0001) and SiC(000-1) using ultra-thin, isotopically-labeled Si13C `marker layers' grown epitaxially on the Si12C surfaces. Few…
cond-mat.mtrl-sci2011★ 3 cited
Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100)
M. Copel, S. Oida, A. Kasry +3
Depth profiling of graphene with high-resolution ion beam analysis is a practical method for analysis of monolayer thicknesses of graphene. Not only is the energy resolution suffic…
cond-mat.mtrl-sci2010★ 130 cited
Decoupling Graphene from SiC(0001) via Oxidation
S. Oida, F. R. McFeely, J. B. Hannon +6
When epitaxial graphene layers are formed on SiC(0001), the first carbon layer (known as the "buffer layer"), while relatively easy to synthesize, does not have the desirable elect…