130 citations · 228 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2010★ 98 cited
Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors
Christos Dimitrakopoulos, Yu-Ming Lin, Alfred Grill +12
Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated,…
cond-mat.mtrl-sci2010★ 130 cited
Decoupling Graphene from SiC(0001) via Oxidation
S. Oida, F. R. McFeely, J. B. Hannon +6
When epitaxial graphene layers are formed on SiC(0001), the first carbon layer (known as the "buffer layer"), while relatively easy to synthesize, does not have the desirable elect…