Chemical potential jump between hole- and electron-doped sides of ambipolar high-Tc cuprate

Abstract

In order to study an intrinsic chemical potential jump between the hole- and electron-doped high-Tc superconductors, we have performed core-level X-ray photoemission spectroscopy (XPS) measurements of Y0.38La0.62Ba1.74La0.26Cu3Oy (YLBLCO), into which one can dope both holes and electrons with maintaining the same crystal structure. Unlike the case between the hole-doped system La_2-xSrxCuO4 and the electron-doped system Nd_2-xCexCuO4, we have estimated the true chemical potential jump between the hole- and electron-doped YLBLCO to be ~0.8 eV, which is much smaller than the optical gaps of 1.4-1.7 eV reported for the parent insulating compounds. We attribute the reduced jump to the indirect nature of the charge-excitation gap as well as to the polaronic nature of the doped carriers.

4 pages, 3 figures

References in corpus (6)

• Polaronic behavior of undoped high-Tc cuprates
• Electron-phonon interaction in the t-J model
• Strong charge fluctuations manifested in the high-temperature Hall coefficient of high-T_c cuprates
• Doping dependence of the chemical potential and surface electronic structure in YBa2Cu3O6+x and La2-xSrxCuO4 using hard x-ray photoemission spectroscopy
• Doping dependence of chemical potential and entropy in hole- and electron-doped high-Tc cuprates
• Doping n-type carriers by La-substitution for Ba in YBa_2Cu_3O_y system

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• Revealing the Coulomb interaction strength in a cuprate superconductor
• High-pressure effects on single crystals electron-doped r${}_{2-x}$Ce${}_x$CuO${}_4$
• Electronic Evolution from the Parent Mott Insulator to a Superconductor in Lightly Hole-Doped Bi2Sr2CaCu2O8+delta
• Nature of carrier doping in T'-La1.8-xEu0.2SrxCuO4 studied by X-Ray Photoemission and Absorption Spectroscopy
• Disorder Effects on Competition between Antiferromagnetism and Superconductivity in Cuprate Superconductors through the Enhancement in Charge Susceptibility