High-pressure effects on single crystals electron-doped r${}_{2-x}$Ce${}_x$CuO${}_4$

Abstract

We present high pressure diamond anvil cell synchrotron X-ray, resistivity, and ac-susceptibility measurements on electron-doped cuprate Pr${}_{2-x}$Ce${}_x$CuO${}_4$ to much higher pressures than previously reported. At 2.72 GPa between 88 and 98 of the superconducting T${}^{\prime }$ phase \cite{Tprime} of the optimally doped Pr${}_{1.85}$Ce${}_{0.15}$CuO${}_4$ transforms into the insulating phase T. The T${}_c$ of the remaining 2-12 T${}^{\prime }$ phase is suppressed continuously from 22 K to 18.5 K at about 14 GPa. Remarkably, the T${}_c$ of the over doped Pr${}_{1.83}$Ce${}_{0.17}$CuO${}_4$ remains practically unchanged even at 32 GPa. This behavior of the electron-doped cuprate contrasts with that of the hole-doped cuprate for which T${}_c$ is first substantially enhanced with applied pressure.

6 pages, 6 figures

References in corpus (1)

• Doping n-type carriers by La-substitution for Ba in YBa_2Cu_3O_y system