Momentum-Resolved Visualization of Electronic Evolution in Doping a Mott Insulator

Abstract

High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved photoemission spectroscopy measurements on a cuprate parent compound by sequential in situ electron doping. The chemical potential jumps to the bottom of the upper Hubbard band upon a slight electron doping, making it possible to directly visualize the charge transfer band and the full Mott gap region. With increasing doping, the Mott gap rapidly collapses due to the spectral weight transfer from the charge transfer band to the gapped region and the induced low-energy states emerge in a wide energy range inside the Mott gap. These results provide key information on the electronic evolution in doping a Mott insulator and establish a basis for developing microscopic theories for cuprate superconductivity.

23 pages, 5 figures

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Cited by in corpus (9)

• Discovery of a Single-Band Mott Insulator in a van der Waals Flat-Band Compound
• Direct observation of nodeless superconductivity and phonon modes in electron-doped copper oxide Sr${}_{1-x}$Nd${}_x$CuO${}_2$
• Anomalous normal state gap in an electron-doped cuprate
• On the cuprates' universal waterfall feature: evidence of a momentum-driven crossover
• Spectroscopic evidence for possible quantum spin liquid behavior in a two-dimensional Mott insulator
• Experimental observation of pseudogap in a modulation-doped Mott insulator: Sn/Si(111)-($\sqrt{3}\times \sqrt{3}$)-R30${}^{\text{o}}$
• Orbital-selective metal skin induced by alkali-metal-dosing Mott-insulating Ca${}_2$RuO${}_4$
• Continuously Doping Bi 2 Sr 2 CaCu 2 O 8+δ into Electron-Doped Superconductor by CaH 2 Annealing Method
• Renormalization of dispersion in electron-doped bilayer cuprate superconductors