Differences in the high-energy kink between hole- and electron-doped high-$T_{\mathrm{c}}$ superconductors

Abstract

We have performed an angle-resolved photoemission spectroscopy (ARPES) study of Nd${}_{1.85}$Ce${}_{0.15}$CuO${}_4$ (NCCO) in order to elucidate the origin of the high-energy kink (HEK) observed in the high-$T_{\mathrm{c}}$ superconductors (HTSCs). The energy scale of the HEK in NCCO is large compared with that in hole-doped HTSCs, consistent with previous ARPES studies. From measurement in a wide momentum region, we have demonstrated that between the hole- and electron-doped HTSCs the energy position of the HEK is shifted approximately by the amount of the chemical potential difference. Also, we have found that around $(\pi ,0)$ the HEK nearly coincides with the band bottom while around the node the band reaches the incoherent region and the HEK appears at the boundary between the coherent and incoherent regions.

5 pages, 3 figures

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• Effect of strong correlations on the high energy anomaly in hole- and electron-doped high-Tc superconductors
• Doping evolution and polar surface reconstruction of the infinite-layer cuprate Sr${}_{1-x}$La${}_x$CuO${}_2$
• Chemical potential jump between hole- and electron-doped sides of ambipolar high-Tc cuprate
• Phonon origin of low energy and high energy kinks in high temperature cuprate superconductors
• The high-energy anomaly in ARPES spectra of the cuprates-many body or matrix element effect?
• Anisotropic dressing of electrons in electron-doped cuprate superconductors
• On the cuprates' universal waterfall feature: evidence of a momentum-driven crossover
• Theory of the waterfall phenomenon in cuprate superconductors
• Second derivative analysis and alternative data filters for multi-dimensional spectroscopies: a Fourier-space perspective
• Universal Chemical Formula Dependence of $Ab$ $Initio$ Low-Energy Effective Hamiltonian in Single-Layer Carrier Doped Cuprate Superconductors -- Study by Hierarchical Dependence Extraction Algorithm
• Effect of short-range correlations on spectral properties of doped Mott insulators