Doping evolution and polar surface reconstruction of the infinite-layer cuprate SrLaCuO
arXiv:1508.03023 · doi:10.1103/PhysRevB.92.035149
Abstract
We use angle-resolved photoemission spectroscopy to study the doping evolution of infinite-layer SrLaCuO thin films grown by molecular-beam epitaxy. At low doping, the material exhibits a dispersive lower Hubbard band typical of the superconducting cuprate parent compounds. As carriers are added to the system, a continuous evolution from charge-transfer insulator to superconductor is observed, with the initial lower Hubbard band pinned well below the Fermi level and the development of a coherent low-energy band with electron doping. This two-component spectral function emphasizes the important role that strong local correlations play even at relatively high doping levels. Electron diffraction probes reveal a surface reconstruction of the material at low doping levels. Using a number of simple assumptions, we develop a model of this reconstruction based on the polar nature of the infinite-layer structure. Finally, we provide evidence for a thickness-controlled transition in ultrathin films of SrCuO grown on nonpolar SrTiO, highlighting the diverse structural changes that can occur in polar complex oxide thin films.
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- Advances in Complex Oxide Quantum Materials Through New Approaches to Molecular Beam Epitaxy
- Atomic Visualization of Copper Oxide Structure in Infinite-Layer Cuprate SrCuO2
- ARPES Detection of Superconducting Gap Sign in Unconventional Superconductors
- Anisotropic dressing of electrons in electron-doped cuprate superconductors
- Magnon interactions in a moderately correlated Mott insulator
- Molecular beam epitaxy growth and surface structure of Sr1-xNdxCuO2 cuprate films
- Universal Chemical Formula Dependence of Low-Energy Effective Hamiltonian in Single-Layer Carrier Doped Cuprate Superconductors -- Study by Hierarchical Dependence Extraction Algorithm
- Magnetic phases of electron-doped infinite-layer SrLaCuO from first-principles density functional calculations
- An emergent quasi-2D metallic state derived from the Mott insulator framework